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STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1
N-CHANNEL 600V - 0.9 - 8A TO-220/TO-220FP/DPAK/IPAK MDmeshTM Power MOSFET
TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1
s s s s
VDSS 600 V 600 V 600 V 600 V
RDS(on) < < < < 1 1 1 1
ID 8A 8 A(*) 5A 5A
Pw 100 W 30 W 96 W 96 W
3
s
TYPICAL RDS(on) = 0.9 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
TO-220
1
2
TO-220FP
3 1
1
3 2
DPAK TO-252 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
IPAK TO-251
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS The MDmeshTM family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE STP8NM60 STP8NM60FP STD5NM60T4 STD5NM60-1 MARKING P8NM60 P8NM60FP D5NM60 D5NM60 PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE
August 2003
1/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP8NM60
Value
STP8NM60FP STD5NM60 STD5NM60-1
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 8 5 32 100 0.8 15 -
600 600 30 8 (*) 5 (*) 32 (*) 30 0.24 15 2500 -55 to 150 -55 to 150 5 3.1 20 96 0.4 15 -
V V V A A A W W/C V/ns V C C
( ) Pulse width limited by safe operating area (1) ISD 5A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.25 TO-220FP 4.16 62.5 300 DPAK IPAK 1.3 C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 2.5 200 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 2.5 A 3 4 0.9 Min. 600 1 10 100 5 1 Typ. Max. Unit V A A nA V
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS = ID(on) x RDS(on)max, ID = 2.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2.4 440 100 10 50 4 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 480V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDD = 300 V, ID = 2.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 5 A, VGS = 10V Min.
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ. 14 10 13 5 6 18 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 2.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 5 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 23 10 7 10 17 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/s VDD = 100 V, Tj = 25C (see test circuit, Figure 5) ISD = 5 A, di/dt = 100A/s VDD = 100 V, Tj = 150C (see test circuit, Figure 5) 300 1950 13 445 3005 13.5 Test Conditions Min. Typ. Max. 8 32 1.5 Unit A A V ns C A ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
10/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
A
C C2
L2 D
B3
B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
11/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W
12/13
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 1.85 7.6 2.75 4.1 8.1 2.1
16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
MAX. 10.6 12.1 1.6
* on sales type
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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